Threshold Voltage Roll-Off Due to Channel Length Reduction for a Nanoscale n-channel FinFET
نویسندگان
چکیده
Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called the “threshold voltage roll-off” has been simulated. By using this threshold voltage, current-voltage characteristics have been observed for different operating regions of FinFETs with different channel lengths and also for different oxide thickness. In order to justify the validity of the proposed model the simulation results have been compared with the available experimental and/or simulation data. The analytical expressions derived in the present model can be a useful tool in device design and optimization.
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